Subthreshold current in MODFETs of tenth-micrometer gate

The subthreshold current of conventional GaAs/AlGaAs MODFETs and pseudomorphic InGaAs/AlGaAs MODFETs with the gate length down to 0.12 mu m is investigated. The gate swing increases with the drain voltage and decreases with the gate length. It is attributed to charge injection from source to drain,...

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Bibliographic Details
Published in:IEEE electron device letters 1990-01, Vol.11 (1), p.63-65
Main Authors: Jiang, C., Tsui, D.C., Lin, B.J.F., Lee, H., Lepore, A., Levy, M.
Format: Article
Language:English
Subjects:
Applied sciences
Doping
Electronics
Exact sciences and technology
Gallium arsenide
HEMTs
Indium gallium arsenide
Leakage current
MODFETs
Quantum wells
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Subthreshold current
Transistors
Voltage
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Summary:The subthreshold current of conventional GaAs/AlGaAs MODFETs and pseudomorphic InGaAs/AlGaAs MODFETs with the gate length down to 0.12 mu m is investigated. The gate swing increases with the drain voltage and decreases with the gate length. It is attributed to charge injection from source to drain, limited by the channel potential barrier, which is a function of both the drain and the gate voltages. The pseudomorphic InGaAs/AlGaAs MODFETs show much better control than the conventional GaAs/AlGaAs MODFETs for the subthreshold current, especially with high drain biases. This shows that the pseudomorphic quantum-well structures can suppress the subthreshold current passing through the GaAs buffer region and reduce the undesirable short-channel effects.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.46932