Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

• Published in: Journal of non-crystalline solids 2005-01, Vol.351 (1), p.89-92
• Main Authors: Myong, Seung Yeop, Shevaleevskiy, Oleg, Lim, Koeng Su, Miyajima, Shinsuke, Konagai, Makoto
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Materials science; Nanocrystalline materials; Nanocrystals and nanoparticles; Nanoscale materials and structures: fabrication and characterization; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics
• ISSN: 0022-3093; 1873-4812
• DOI: 10.1016/j.jnoncrysol.2004.09.019

We select the boron as a dopant of wide bandgap nanocrystalline silicon-carbide (nc-SiC:H) film in order to achieve a high conductivity. Boron atoms introduced at the growing surface play important roles on the structural, electrical and optical characteristics of this material. It is found that they hinder the nucleation of nanocrystallites by elevating the deposition speed. Therefore, a relevant light doping is essential to improve the electrical conductivity without deteriorating significantly the crystallinity and optical bandgap.