SEU/SRAM as a process monitor

The SEU/SRAM is a 4-kbit static random access memory (SRAM) designed to detect single-event upsets (SEU's) produced by high-energy particles, either in space or on the ground. This device was used to determine the distribution of the memory cell spontaneous flip potential. The variance in this...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 1994-08, Vol.7 (3), p.319-324
Main Authors: Blaes, B.R., Buehler, M.G.
Format: Article
Language:English
Subjects:
Applied sciences
CMOS process
Design. Technologies. Operation analysis. Testing
Electronics
Event detection
Exact sciences and technology
Integrated circuits
Inverters
Monitoring
Radiation detectors
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Single event upset
SRAM chips
Threshold voltage
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Summary:The SEU/SRAM is a 4-kbit static random access memory (SRAM) designed to detect single-event upsets (SEU's) produced by high-energy particles, either in space or on the ground. This device was used to determine the distribution of the memory cell spontaneous flip potential. The variance in this potential was determined to be due to the variation in the threshold voltage of one of the n-FET's found in the memory cell. For a 1.2-/spl mu/m CMOS process, the standard deviation of the n-FET VT was found to be 8 mV. This structure provides substantial statistical data; 4096 data points are measured. Using cumulative distribution and residual plots, outlier cells, such as stuck cells and nonnormally distributed cells, are easily identified.< >
ISSN:0894-6507
1558-2345
DOI:10.1109/66.311335