Applicability of the Meyer-Neldel rule in a-Se90Ge10-xInx thin films in presence of light

Temperature dependence of conductivity is measured in dark as well as in presence of light in amorphous thin films of Se90Ge10--xInx in the temperature range 285--365K and in the intensity range 6400--10750lx. It is observed that pre--exponential factor (sigma0) depends on activation energy (DeltaE)...

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Bibliographic Details
Published in:Journal of non-crystalline solids 2005-07, Vol.351 (19-20), p.1577-1581
Main Authors: SINGH, Sangeeta, SHUKLA, R. K, KUMAR, A
Format: Article
Language:English
Subjects:
Amorphous semiconductors
glasses
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Photoconduction and photovoltaic effects
photodielectric effects
Physics
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Summary:Temperature dependence of conductivity is measured in dark as well as in presence of light in amorphous thin films of Se90Ge10--xInx in the temperature range 285--365K and in the intensity range 6400--10750lx. It is observed that pre--exponential factor (sigma0) depends on activation energy (DeltaE). A straight line between lnsigma0 and DeltaE indicates the presence of MN rule in dark as well as in presence of light. A strong correlation between MN conductivity pre--factor sigma00 and characteristic energy kT0 has also been observed. The origin of this correlation and the MN rule can be attributed to the effect of the exponential energy distribution of defect traps.
ISSN:0022-3093
1873-4812
DOI:10.1016/j.jnoncrysol.2005.04.003