Resolidified Chalcogen-Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders

Bilayer semiconductors have attracted much attention due to their stacking-order-dependent properties. However, as both 3R- and 2H-stacking are energetically stable at high temperatures, most of the high-temperature grown bilayer materials have random 3R- or 2H-stacking orders, leading to non-unifor...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-01, Vol.20 (2), p.e2305506-e2305506
Main Authors: Wu, Qinke, He, Liqiong, Wang, Dan, Nong, Huiyu, Wang, Jingwei, Cai, Zhengyang, Zhao, Shilong, Zheng, Rongxu, Lai, Shen, Zhang, Rongjie, Feng, Qingliang, Liu, Bilu
Format: Article
Language:English
Subjects:
Bilayers
Chemical vapor deposition
Electrical properties
High temperature
Molybdenum disulfide
Optical properties
Semiconductors
Tungsten disulfide
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Summary:Bilayer semiconductors have attracted much attention due to their stacking-order-dependent properties. However, as both 3R- and 2H-stacking are energetically stable at high temperatures, most of the high-temperature grown bilayer materials have random 3R- or 2H-stacking orders, leading to non-uniformity in optical and electrical properties. Here, a chemical vapor deposition method is developed to grow bilayer semiconductors with controlled stacking order by modulating the resolidified chalcogen precursors supply kinetics. Taking tungsten disulfide (WS ) as an example, pure 3R-stacking (100%) and 2H-stacking dominated (87.6%) bilayer WS are grown by using this method and both show high structural and optical quality and good uniformity. Importantly, the bilayer 3R-stacking WS shows higher field effect mobility than 2H-stacking samples, due to the difference in stacking order-dependent surface potentials. This method is universal for growing other bilayer semiconductors with controlled stacking orders including molybdenum disulfide and tungsten diselenide, paving the way to exploit stacking-order-dependent properties of these family of emerging bilayer materials.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.202305506