Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

• Published in: Thin solid films 2005-12, Vol.492 (1), p.203-206
• Main Authors: Yan, Zhi, Song, Zhi Tang, Liu, Wei Li, Wan, Qing, Zhang, Fu Min, Feng, Song Lin
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Exact sciences and technology; Ion and electron beam-assisted deposition; ion plating; Ion beam assisted deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties; Photoconduction and photovoltaic effects; Photoconduction and photovoltaic effects; photodielectric effects; Physics; Zinc oxide
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.06.035

P-type zinc oxide (ZnO) thin films were synthesized by ion beam assisted deposition and their optical and electrical properties were investigated. It was found that after annealing at 400 °C, the transmittance of ZnO films became higher than that of the as-deposited films. Hall measurements indicated that ZnO films were p-type and the highest carrier concentration of 2.17 × 10 17 cm - 3 and mobility of 3.51 cm 2/V·s were obtained. Photoconductivity of the p-type ZnO films was also investigated and the conductivity of the films under ultraviolet illumination is about 600 times larger than that in the dark.