Optical and electrical properties of p-type AgInSnxS2-x (x=0-0.04) thin films prepared by spray pyrolysis

• Published in: Thin solid films 2005-11, Vol.490 (2), p.168-172
• Main Authors: ALBOR-AGUILERA, M. L, CAYENTE-ROMERO, J. J, PEZA-TAPIA, J. M, DE LEON-GUTIERREZ, L. R, ORTEGA-LOPEZ, M
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.04.050

AgInSnxS2-x (x=0-0DDT2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 DDGC from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 DDGC, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0DDT2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSnxS2-x (x < 2) thin films.