Thermal coupling in integrated circuits: application to thermal testing

The power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2001-01, Vol.36 (1), p.81-91
Main Authors: Altet, J., Rubio, A., Schaub, E., Dilhaire, S., Claeys, W.
Format: Article
Language:English
Subjects:
Application specific integrated circuits
Circuit optimization
Circuits
Coupling circuits
Differential thermal analysis
Energy consumption
Integrated circuits
Lasers
MOS devices
Physics
Power consumption
Silicon
Strategy
Temperature measurement
Temperature sensors
Thermal coupling
Thermoreflectance
Very large scale integration
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Summary:The power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.896232