Silicon avalanche cathodes and their characteristics

A highly doped shallow p-n junction (

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-10, Vol.38 (10), p.2377-2382
Main Authors: Ea, J.Y., Zhu, D., Lu, Y., Lalevic, B., Zeto, R.J.
Format: Article
Language:English
Subjects:
Anodes
Cathodes
Current density
Electron emission
Electron sources
P-n junctions
Semiconductor diodes
Silicon
Valves
Voltage
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Description
Summary:A highly doped shallow p-n junction (
ISSN:0018-9383
1557-9646
DOI:10.1109/16.88529