Schottky-Diode Realization for Low-Noise Mixing at Millimeter Wavelengths

A short review of the current theory and technology of low-noise Schottky-barrier diodes for use at millimeter wavelengths is presented. Recent advances in fabrication technology are discussed which have yielded photolithographically produced GaAs diodes with a cutoff frequency in excess of 3000 GHz...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1976-11, Vol.24 (11), p.702-706
Main Author: Wrixon, G.T.
Format: Article
Language:English
Subjects:
Cooling
Electrons
Fabrication
Gallium arsenide
Millimeter wave technology
Noise reduction
Schottky diodes
Semiconductor device doping
Semiconductor diodes
Thermionic emission
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A short review of the current theory and technology of low-noise Schottky-barrier diodes for use at millimeter wavelengths is presented. Recent advances in fabrication technology are discussed which have yielded photolithographically produced GaAs diodes with a cutoff frequency in excess of 3000 GHz together with improved noise performance due to reduced contamination of the contact. Noise producing mechanisms in diodes are outlined and the limitations of noise reduction by cooling are considered. Finally, methods for overcoming the high-frequency limitations of conventional GaAs Schottky diodes are assessed.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1976.1128947