Self-biased boron-10 coated high-purity epitaxial GaAs thermal neutron detectors

Semiconductor thermal neutron detection devices based on /sup 10/B-coated high-purity GaAs films were investigated. The fundamental device consisted of high-purity /spl nu/-type epitaxial GaAs films grown onto n-type GaAs substrates. Two blocking contact adaptations were applied to the high-purity /...

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Published in:IEEE transactions on nuclear science 2000-08, Vol.47 (4), p.1364-1370
Main Authors: McGregor, D.S., Vernon, S.M., Gersch, H.K., Markham, S.M., Wojtczuk, S.J., Wehe, D.K.
Format: Article
Language:English
Subjects:
Absorption
Detectors
Event detection
Gallium arsenide
Gamma ray detection
Gamma rays
Neutrons
Semiconductor films
Stationary state
Voltage
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cited_by cdi_FETCH-LOGICAL-c402t-d4e32a6439aeeb5f9d5e9e95104530cd95124ed9cc59240edf2f077ab33e67423
cites cdi_FETCH-LOGICAL-c402t-d4e32a6439aeeb5f9d5e9e95104530cd95124ed9cc59240edf2f077ab33e67423
container_end_page 1370
container_issue 4
container_start_page 1364
container_title IEEE transactions on nuclear science
container_volume 47
creator McGregor, D.S.
Vernon, S.M.
Gersch, H.K.
Markham, S.M.
Wojtczuk, S.J.
Wehe, D.K.
description Semiconductor thermal neutron detection devices based on /sup 10/B-coated high-purity GaAs films were investigated. The fundamental device consisted of high-purity /spl nu/-type epitaxial GaAs films grown onto n-type GaAs substrates. Two blocking contact adaptations were applied to the high-purity /spl nu/-type GaAs regions: 2000 /spl Aring/ thick p+GaAs blocking contacts and 200 /spl Aring/ thick Schottky blocking contacts. The /spl nu/-type GaAs active layers ranged between 1 micron and 5 microns in thickness. The device sensitive areas were 3 mm/spl times/3 mm, each of which was coated with a 1.5 mm diameter film of 98% enriched high-purity /sup 10/B. The built-in potential of the blocking contact interface was sufficient to operate the devices, and no external voltage bias was necessary to operate the detectors. Preliminary calculations on intrinsic detection efficiency indicate values between 1.6% and 2.6%.
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source IEEE Electronic Library (IEL) Journals
subjects Absorption
Detectors
Event detection
Gallium arsenide
Gamma ray detection
Gamma rays
Neutrons
Semiconductor films
Stationary state
Voltage
title Self-biased boron-10 coated high-purity epitaxial GaAs thermal neutron detectors
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