Silicon nitride thin-film deposition by LPCVD with in situ HF vapor cleaning and its application to stacked DRAM capacitor fabrication

Silicon nitride film deposited by LPCVD with newly developed in situ HF vapor cleaning has been studied and applied to fabricate dielectric films for stacked DRAM capacitors. Using this method, an oxide-free surface of underlaid poly-Si can be obtained. Silicon nitride film deposited on this surface...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-05, Vol.41 (5), p.703-708
Main Authors: Ino, M., Inoue, N., Yoshimaru, M.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitors
Cleaning
Dielectric films
Dielectric thin films
Electrodes
Electronics
Exact sciences and technology
Hafnium
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Semiconductor thin films
Silicon
Sputtering
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Summary:Silicon nitride film deposited by LPCVD with newly developed in situ HF vapor cleaning has been studied and applied to fabricate dielectric films for stacked DRAM capacitors. Using this method, an oxide-free surface of underlaid poly-Si can be obtained. Silicon nitride film deposited on this surface has been verified by FTIR measurement to have the stoichiometrically proper composition of Si/sub 3/N/sub 4/. However, the film was found to be selectively deposited on poly-Si electrodes. This selective deposition degrades the reliability of the stacked capacitor, because the silicon nitride can not completely cover the periphery of poly-Si electrodes on SiO/sub 2/. We propose a simple process that avoids the problem making it possible to apply silicon nitride film to stacked-capacitor fabrication. Stacked capacitors fabricated by this process exhibit very low leakage current and high electrical reliability even for ultra-thin silicon nitride films less than 5 nm thick.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.285020