Temperature variable noise and electrical characteristics of Au-Ga-As Schottky barrier millimeter-wave mixer diodes

The fabrication and characterization of gold-gallium arsenide Schottky-barrier diodes on molecular-beam-epitaxy (MBE)-grown epitaxial gallium arsenide intended for cryogenic millimeter-wave mixer applications is reported. The Schottky barriers were formed either by pulse plating or by in situ evapor...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1988-11, Vol.36 (11), p.1469-1475
Main Authors: Zirath, H.H.G., Nilsen, S.M., Hjelmgren, H., Ramberg, L.P., Kollberg, E.L.
Format: Article
Language:English
Subjects:
Acoustical engineering
Cryogenics
Electric variables
Epitaxial growth
Fabrication
Gallium arsenide
Molecular beam epitaxial growth
Schottky barriers
Schottky diodes
Temperature
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Summary:The fabrication and characterization of gold-gallium arsenide Schottky-barrier diodes on molecular-beam-epitaxy (MBE)-grown epitaxial gallium arsenide intended for cryogenic millimeter-wave mixer applications is reported. The Schottky barriers were formed either by pulse plating or by in situ evaporation in the MBE system after the epitaxial growth. The equivalent temperature as derived from the current-voltage characteristic is considerably lower at high current densities and cryogenic temperature than for the more commonly used Pt-GaAs Schottky diode. Noise-generation mechanisms are investigated as a function of forward bias and temperature. At cryogenic temperature, a best equivalent noise temperature of 22 K was obtained at 4 GHz for a DC-biased diode.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.8909