Structural and electrical characterization of AgInS2 thin films grown by single-source thermal evaporation method

Structural and electrical properties of AgInS2 (AIS) thin films grown by single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successfully grown by annealing above 400DGC in air. The grain size of the AIS crystals was above 2.5...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2005-07, Vol.16 (7), p.393-396
Main Authors: AKAKI, Y, KURIHARA, S, SHIRAHAMA, M, TSURUGIDA, K, KAKENO, T, YOSHINO, K
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Grain size
Other inorganic semiconductors
Physics
Thin films
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Summary:Structural and electrical properties of AgInS2 (AIS) thin films grown by single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successfully grown by annealing above 400DGC in air. The grain size of the AIS crystals was above 2.5 mm from the surface photograph. Furthermore, the AIS grain sizes became large with increasing the annealing temperatures. All the samples indicated n-type conduction by the Van der Pauw technique. The carrier concentrations and the resistivities of the AIS films at room temperature were in the range of 1019-1022 cm-3 and 10-1-10-3 Omegacm, respectively. Therefore the mobilities increased from 0.6 to 6.0 cm2/Vs with increasing the grain sizes.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-005-2303-7