Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure

In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold volt...

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Bibliographic Details
Published in:IEEE electron device letters 2004-09, Vol.25 (9), p.634-636
Main Authors: KUO, Po-Yi, CHAO, Tien-Sheng SR, LEI, Tan-Fu
Format: Article
Language:English
Subjects:
Active matrix liquid crystal displays
Applied sciences
Barriers
Breakdown
Chaos
Chemical vapor deposition
Circuits
Contact
Electric potential
Electronics
Exact sciences and technology
Immune system
MOSFETs
Schottky barriers
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Thin film transistors
Threshold voltage
Transistors
Voltage
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Summary:In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.834635