Recent progress in processing and properties of ZnO

ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN sy...

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Bibliographic Details
Published in:Progress in materials science 2005-03, Vol.50 (3), p.293-340
Main Authors: PEARTON, S. J, NORTON, D. P, IP, K, HEO, Y. W, STEINER, T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Conductivity of specific materials
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Doping and impurity implantation in other materials
Electronic transport in condensed matter
Exact sciences and technology
Materials science
Other crystalline inorganic semiconductors
Physics
Structure of solids and liquids
crystallography
Surface treatments
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Summary:ZnO is attracting considerable attention for its possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics and surface acoustic wave devices. There is also interest in integrating ZnO with other wide bandgap ceramic semiconductors such as the AlInGaN system. In this paper we summarize recent progress in doping control, materials processing methods such as dry etching and Ohmic and Schottky contact formation, new understanding of the role of hydrogen and finally the prospects for control of ferromagnetism in transition-metal doped ZnO.
ISSN:0079-6425
1873-2208
DOI:10.1016/j.pmatsci.2004.04.001