Structural analysis of indium sulphide thin films elaborated by chemical bath deposition

• Published in: Thin solid films 2005-02, Vol.473 (2), p.201-207
• Main Authors: Yahmadi, B., Kamoun, N., Bennaceur, R., Mnari, M., Dachraoui, M., Abdelkrim, K.
• Format: Article
• Language: English
• Subjects: Chemical bath deposition; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Heat treatment; Indium sulphide; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Structural analysis; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2004.04.002

X-ray diffraction and scanning electron microscopy show that the crystalline state of indium sulphide thin films, elaborated by chemical bath deposition technique on various substrates, is strongly affected by deposition parameters (deposition time t D, pH solution and thioacetamide concentration), as well as by annealing treatment. We show that β-In 2S 3 thin films grown on glass substrate during t D=60 min, and annealed under nitrogen at 400 °C during 1 h are well crystallized according to the cubic structure with the preferential orientation (610). They have a good homogenity and crystallinity.