Stress polarity dependence of the activation energy in time-dependent dielectric breakdown of thin gate oxides

Stress polarity dependence of the activation energies in the two time dependent dielectric breakdown measurements, the constant-current injection (Q/sub bd/ testing) and the constant-voltage stressing (t/sub bd/ testing) are investigated for gate oxides with the thickness ranging from 10 to 4 nm. A...

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Bibliographic Details
Published in:IEEE electron device letters 1998-11, Vol.19 (11), p.399-401
Main Authors: Eriguchi, K., Niwa, M.
Format: Article
Language:English
Subjects:
Current density
Dielectric breakdown
Dielectric measurements
Energy measurement
Q measurement
Stress measurement
Temperature dependence
Testing
Thickness measurement
Time measurement
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Summary:Stress polarity dependence of the activation energies in the two time dependent dielectric breakdown measurements, the constant-current injection (Q/sub bd/ testing) and the constant-voltage stressing (t/sub bd/ testing) are investigated for gate oxides with the thickness ranging from 10 to 4 nm. A remarkable polarity dependence of the activation energies appears in the t/sub bd/ testing when the oxide thickness decreases. This phenomenon is found to be due to a characteristic temperature dependence of the gate current density during the whole t/sub bd/ testing period for thinner oxides, which is considered as a result from the temperature dependence of the electron trapping process during the stressing.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.728892