Thermal analysis of high-power modules

A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor-stack types: direct bond copper (DEC), thick-film printed substrate, and insulated metal substrate (IMS). DEC and thick film are thermally superior to IMS, but IMS...

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Bibliographic Details
Published in:IEEE transactions on power electronics 1997-01, Vol.12 (1), p.3-11
Main Authors: Van Godbold, C., Sankaran, V.A., Hudgins, J.L.
Format: Article
Language:English
Subjects:
Applied sciences
Electrical engineering. Electrical power engineering
Electromagnetic interference
Electronic packaging thermal management
Electronics
Exact sciences and technology
Heat
Inductance
Land surface temperature
Minimization
Multichip modules
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
Semiconductor device packaging
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Switches
Switching circuits
Thermal resistance
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Description
Summary:A highly descriptive method for displaying heat flow in power modules is presented. Heat flow is studied for three different transistor-stack types: direct bond copper (DEC), thick-film printed substrate, and insulated metal substrate (IMS). DEC and thick film are thermally superior to IMS, but IMS shows potential. In addition, the effect of case-to-sink interface conductivity on heat flow is studied and shown to be of extreme importance in a proper thermal simulation.
ISSN:0885-8993
1941-0107
DOI:10.1109/63.554164