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Effects of Cu diffusion behaviors on electronic property of Cu/Ta/SiO2/Si structure
Electronic properties of Cu/Ta/SiO2/Si structures are strongly affected by the temperature dependence of atomic diffusion behaviors. Increasing the annealing temperature from 800 to 950 DGC, the sheet-resistance was anomalously reduced from 0.88 to 0.16 *W/cm(2). It is believed that Ta layer was oxi...
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| Published in: | Thin solid films 2004-09, Vol.462-463 (Complete), p.192-196 |
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| Main Authors: | , , , , |
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| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c237t-35a3dd69ada98b279c4315b9461147e8d06b1c7c59c318ae3f61fe12fc146a23 |
| container_end_page | 196 |
| container_issue | Complete |
| container_start_page | 192 |
| container_title | Thin solid films |
| container_volume | 462-463 |
| creator | Li, S Park, H S Liang, M H Yip, T H Prabhakar, O |
| description | Electronic properties of Cu/Ta/SiO2/Si structures are strongly affected by the temperature dependence of atomic diffusion behaviors. Increasing the annealing temperature from 800 to 950 DGC, the sheet-resistance was anomalously reduced from 0.88 to 0.16 *W/cm(2). It is believed that Ta layer was oxidized to form Ta2O5 at 950 DGC in which the diffusion channels could not be formed. Therefore, the individual Cu atoms could only cross the Ta2O5 layer percolating into SiO2 through the stacking faults. This diffusion behavior significantly restricted Cu migration at such a high temperature, thus reducing the sheet-resistance to a value close to the value observed in as-deposited sample. |
| doi_str_mv | 10.1016/j.tsf.2004.05.072 |
| format | article |
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Increasing the annealing temperature from 800 to 950 DGC, the sheet-resistance was anomalously reduced from 0.88 to 0.16 *W/cm(2). It is believed that Ta layer was oxidized to form Ta2O5 at 950 DGC in which the diffusion channels could not be formed. Therefore, the individual Cu atoms could only cross the Ta2O5 layer percolating into SiO2 through the stacking faults. This diffusion behavior significantly restricted Cu migration at such a high temperature, thus reducing the sheet-resistance to a value close to the value observed in as-deposited sample.</description><identifier>ISSN: 0040-6090</identifier><identifier>DOI: 10.1016/j.tsf.2004.05.072</identifier><language>eng</language><ispartof>Thin solid films, 2004-09, Vol.462-463 (Complete), p.192-196</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c237t-35a3dd69ada98b279c4315b9461147e8d06b1c7c59c318ae3f61fe12fc146a23</citedby><cites>FETCH-LOGICAL-c237t-35a3dd69ada98b279c4315b9461147e8d06b1c7c59c318ae3f61fe12fc146a23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Li, S</creatorcontrib><creatorcontrib>Park, H S</creatorcontrib><creatorcontrib>Liang, M H</creatorcontrib><creatorcontrib>Yip, T H</creatorcontrib><creatorcontrib>Prabhakar, O</creatorcontrib><title>Effects of Cu diffusion behaviors on electronic property of Cu/Ta/SiO2/Si structure</title><title>Thin solid films</title><description>Electronic properties of Cu/Ta/SiO2/Si structures are strongly affected by the temperature dependence of atomic diffusion behaviors. 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| source | ScienceDirect Journals |
| title | Effects of Cu diffusion behaviors on electronic property of Cu/Ta/SiO2/Si structure |
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