Electrical evaluation of laser annealed junctions by Hall measurements

Hall measurements performed on laser annealed ultrashallow ion implanted p-type layers on n-type substrates over a wide temperature range showed expected p-type characteristics at low temperature but unexpected n-type behaviour at higher temperature. Samples annealed with lower laser energy fluences...

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Bibliographic Details
Published in:Thin solid films 2004-09, Vol.462 (Complete), p.72-75
Main Authors: Poon, Chyiu Hyia, Tan, Leng Seow, Cho, Byung Jin, Ng, Keh Ting, Bhat, Mousumi, Chan, Lap
Format: Article
Language:English
Subjects:
Hall measurements
Laser annealing
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Summary:Hall measurements performed on laser annealed ultrashallow ion implanted p-type layers on n-type substrates over a wide temperature range showed expected p-type characteristics at low temperature but unexpected n-type behaviour at higher temperature. Samples annealed with lower laser energy fluences displayed the unexpected n-type characteristics over a wider temperature range compared to those annealed at higher energy fluences. These results can be explained by the increased contribution of the n-type substrate to the Hall readings, made possible by a more leaky junction, when the implant damage is inadequately removed. Thus, Hall measurements can be proposed as a quick evaluation tool of the integrity of laser annealed junctions without the need of device fabrication or high-resolution transmission electron microscopy.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.05.024