Three simple methods to obtain large area thin films by pulsed laser deposition

• Published in: IEEE transactions on applied superconductivity 2001-03, Vol.11 (1), p.3852-3855
• Main Authors: Kuzanyan, A.S., Badalyan, G.R., Nikoghosyan, V.R., Gyulamiryan, A.L., Gulian, A.M.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition; Exact sciences and technology; Gas lasers; High-tc films; Laser beams; Laser deposition; Laser theory; Masks; Mass transfer; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Optical films; Optical pulses; Physics; Pulsed laser deposition; Slits; Sputtering; Substrates; Superconducting films and low-dimensional structures; Superconductivity; Telephony; Thin films; Transistors; Variability
• ISSN: 1051-8223; 1558-2515
• DOI: 10.1109/77.919905

Three new relatively simple methods of laser deposition of large area thin films are proposed. The thickness uniformity of films obtained with these methods was preserved within the limits of /spl plusmn/3.5% on 100 mm diameter substrates. The first method employs controlled tilting of the target around the axis parallel with the substrate plane, with the respective positions of the laser beam, focal spot, and substrate being kept constant. The peculiarity of the second and third methods is laser deposition of the compound upon a substrate through a mask. The possibilities of different configurations of the slit in the mask are considered. One method uses a mask with a slit in the form of a sector, which is symmetrical with regard to the substrate radius, with various angular dimensions at different distances from the rotation center of the substrate. Another method uses a mask with two slits in the form of a bent sector, the symmetry axis of which coincides with the line of equal velocity of mass transfer of the deposited compound onto the substrate.