The " gain-lever" effect in InGaAsP/InP multiple quantum welllasers

The gain-lever-effect has been assessed in both multiple quantum well (MQW) and bulk active region lasers having a range of lengths and split ratios in the top contact. Compared with a conventional single-contact laser, a 500-mum MQW FP device with a top-contact split ratio of 8:1 exhibited > 15-...

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Bibliographic Details
Published in:Journal of lightwave technology 1995-02, Vol.13 (2), p.283-289
Main Authors: Seltzer, C P, Westbrook, L D, Wickes, H J
Format: Article
Language:English
Online Access:Get full text
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Summary:The gain-lever-effect has been assessed in both multiple quantum well (MQW) and bulk active region lasers having a range of lengths and split ratios in the top contact. Compared with a conventional single-contact laser, a 500-mum MQW FP device with a top-contact split ratio of 8:1 exhibited > 15-dB improvement in AM efficiency and a signal-to-noise ratio improvement of 7.5 dB. With proper impedance matching, these figures may be improved. A reduced noise figure is obtained at the expense of dynamic range with an additional nonlinearity seen experimentally due to thermal and carrier leakage when compared with simulations carried out using a harmonic balance model. Used carefully, these gain-lever lasers are useful components for future analogue fiber-optic systems
ISSN:0733-8724
DOI:10.1109/50.365217