Threshold Voltage model for mesa-isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson's equation

A threshold voltage model for mesa-isolated fully depleted silicon-on-insulator (FDSOI) MOSFETs, based on the analytical solution of three-dimensional (3-D) Poisson's equation is presented for the first time in this paper. The separation of variables technique is used to solve the 3-D Poisson&#...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-07, Vol.51 (7), p.1169-1177
Main Authors: Katti, G., DasGupta, N., DasGupta, A.
Format: Article
Language:English
Subjects:
Channels
Depletion
Exact solutions
Mathematical analysis
Mathematical models
MOSFETs
Passivation
Poisson equation
Schottky barriers
Schottky diodes
Semiconductor device modeling
Silicon on insulator technology
Surface treatment
Threshold voltage
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Summary:A threshold voltage model for mesa-isolated fully depleted silicon-on-insulator (FDSOI) MOSFETs, based on the analytical solution of three-dimensional (3-D) Poisson's equation is presented for the first time in this paper. The separation of variables technique is used to solve the 3-D Poisson's equation analytically with appropriate boundary conditions. Simple and accurate analytical expressions for the threshold voltage of the front and the back gate are derived. The model is able to predict short channel as well as narrow width effects in mesa-isolated FDSOI MOSFETs. The model is validated by comparing with the experimental results as well as with the numerical results available in the literature.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.830648