The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers

Measurements of intervalence band absorption spectra were made in p-type In 0.53 Ga 0.47 As, InP, and GaAs. The measured spectra are broader, have less temperature dependence, and have 2× less peak intensity than theoretical curves predicted by an elementary k\cdotp band model. For p = 10^{18} cm -3...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1983-06, Vol.19 (6), p.947-952
Main Authors: Henry, C., Logan, R., Merritt, F., Luongo, J.
Format: Article
Language:English
Subjects:
Electromagnetic wave absorption
Gallium arsenide
Indium phosphide
Infrared spectra
Laser theory
Optical materials
Spontaneous emission
Temperature dependence
Threshold current
Wavelength measurement
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Summary:Measurements of intervalence band absorption spectra were made in p-type In 0.53 Ga 0.47 As, InP, and GaAs. The measured spectra are broader, have less temperature dependence, and have 2× less peak intensity than theoretical curves predicted by an elementary k\cdotp band model. For p = 10^{18} cm -3 , all three crystals have absorption coefficients of about 13 cm -1 at 1.3 μm and 25 cm -1 at 1.6 μm. These values of absorption should also be applicable as estimates of intervalence band absorption in quaternary laser material. Because of the low strength and weak temperature dependence of the intervalence band absorption, it should have only a minor effect on the temperature dependence of laser threshold. For example, using our absorption data, we calculate that intervalence band absorption will reduce the experimental temperature parameter T 0 of 1.3 μm quaternary lasers from 194 to 179 K.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1983.1071954