Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001)

La-silicate of (La2O3)0DDT6(SiO2)0DDT4 was prepared by e-beam evaporation of mixed oxides target to control the chemical bonding state and band structure of La2O3 film on n-GaAs (001). Prior to deposition of La-silicate film, sulfur passivation was performed on the surface of GaAs. The composition a...

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Bibliographic Details
Published in:Thin solid films 2006-01, Vol.494 (1-2), p.311-314
Main Authors: YANG, Jun-Kyu, WOO SIK KIM, PARK, Hyung-Ho
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:La-silicate of (La2O3)0DDT6(SiO2)0DDT4 was prepared by e-beam evaporation of mixed oxides target to control the chemical bonding state and band structure of La2O3 film on n-GaAs (001). Prior to deposition of La-silicate film, sulfur passivation was performed on the surface of GaAs. The composition and uniformity of La-silicate film were simulated from the ratio of photoelectron intensity, ILa 4d/ISi 2p, using angle resolved X-ray photoelectron spectroscopy. The formation of hydroxide phase was effectively prohibited when La-silicate is formed. Energy band gap of La2O3 and La-silicate were estimated as ~5DDT6 eV and ~6DDT5 eV, respectively, by combining valence band and absorption spectra. The change in the energy band structure with regard to n-GaAs was correlated with electrical properties. An enhanced conduction band offset of La-silicate is evidenced by Fowler-Nordheim tunneling mechanism.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.08.159