Morphology of the Si–ZnO interface

For Si–ZnO heterostructures, prepared by magnetron sputtering, the interface morphology is studied by XPS and UPS. ZnO films on Si(1 1 1) surfaces (H-termination and 7 × 7) were prepared by magnetron sputtering and metal organic molecular beam epitaxy (MOMBE) and are investigated in well defined dep...

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Bibliographic Details
Published in:Applied surface science 2005-11, Vol.252 (4), p.1139-1146
Main Authors: Meier, U., Pettenkofer, C.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Heterostructure
Interfaces
Photoemission
Physics
Zincoxide
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Summary:For Si–ZnO heterostructures, prepared by magnetron sputtering, the interface morphology is studied by XPS and UPS. ZnO films on Si(1 1 1) surfaces (H-termination and 7 × 7) were prepared by magnetron sputtering and metal organic molecular beam epitaxy (MOMBE) and are investigated in well defined deposition steps and the interface properties were studied in situ. All samples were handled in situ under ultra high vacuum (UHV) conditions. Up to five different interface phases were detected depending on ZnO preparation. Beside a SiO x film induced by the sputter process, ZnO and Zn 2SiO 4 phases are resolved. In addition hydrogen, appearing as Zn OH x , is found in considerable concentrations in the films.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2005.02.039