Mechanism for Cu void defect on various electroplated film conditions

This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the for...

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Bibliographic Details
Published in:Thin solid films 2006-03, Vol.498 (1), p.56-59
Main Authors: Feng, H.P., Cheng, M.Y., Wang, Y.L., Chang, S.C., Wang, Y.Y., Wan, C.C.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Copper plating
Copper void
Cross-disciplinary physics: materials science
rheology
Defects and impurities in crystals
microstructure
Direct current plating
Electrodeposition, electroplating
Electromigration resistance
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Microscopic defects (voids, inclusions, etc.)
Physics
Structure of solids and liquids
crystallography
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Summary:This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.07.062