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Mechanism for Cu void defect on various electroplated film conditions
This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the for...
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| Published in: | Thin solid films 2006-03, Vol.498 (1), p.56-59 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c358t-ce153bcac03c2a6b46fb2a46d2f3124e9883478c88364725a86d2dba4af940e43 |
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| cites | cdi_FETCH-LOGICAL-c358t-ce153bcac03c2a6b46fb2a46d2f3124e9883478c88364725a86d2dba4af940e43 |
| container_end_page | 59 |
| container_issue | 1 |
| container_start_page | 56 |
| container_title | Thin solid films |
| container_volume | 498 |
| creator | Feng, H.P. Cheng, M.Y. Wang, Y.L. Chang, S.C. Wang, Y.Y. Wan, C.C. |
| description | This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP. |
| doi_str_mv | 10.1016/j.tsf.2005.07.062 |
| format | article |
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The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.07.062</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Copper plating ; Copper void ; Cross-disciplinary physics: materials science; rheology ; Defects and impurities in crystals; microstructure ; Direct current plating ; Electrodeposition, electroplating ; Electromigration resistance ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Microscopic defects (voids, inclusions, etc.) ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Thin solid films, 2006-03, Vol.498 (1), p.56-59</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-ce153bcac03c2a6b46fb2a46d2f3124e9883478c88364725a86d2dba4af940e43</citedby><cites>FETCH-LOGICAL-c358t-ce153bcac03c2a6b46fb2a46d2f3124e9883478c88364725a86d2dba4af940e43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,776,780,785,786,23909,23910,25118,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17515082$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Feng, H.P.</creatorcontrib><creatorcontrib>Cheng, M.Y.</creatorcontrib><creatorcontrib>Wang, Y.L.</creatorcontrib><creatorcontrib>Chang, S.C.</creatorcontrib><creatorcontrib>Wang, Y.Y.</creatorcontrib><creatorcontrib>Wan, C.C.</creatorcontrib><title>Mechanism for Cu void defect on various electroplated film conditions</title><title>Thin solid films</title><description>This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Copper plating</subject><subject>Copper void</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Direct current plating</subject><subject>Electrodeposition, electroplating</subject><subject>Electromigration resistance</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Microscopic defects (voids, inclusions, etc.)</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kE9LAzEQxYMoWKsfwFsuett1ks1md_EkxX9Q8aLnkE0mmLLd1GRb8Nub0oI3TwMz772Z-RFyzaBkwOTdqpySKzlAXUJTguQnZMbapit4U7FTMgMQUEjo4JxcpLQCAMZ5NSOPb2i-9OjTmroQ6WJLd8FbatGhmWgY6U5HH7aJ4pAbMWwGPaGlzg9rasJo_eTDmC7JmdNDwqtjnZPPp8ePxUuxfH9-XTwsC1PV7VQYZHXVG22gMlzLXkjXcy2k5a5iXGDXtpVoWpOLFA2vdZtHttdCu04AimpObg-5mxi-t5gmtfbJ4DDoEfORirdS1pJ3WcgOQhNDShGd2kS_1vFHMVB7YGqlMjC1B6agURlY9twcw3UyenBRj8anP2NTsxrave7-oMP86c5jVMl4HA1aHzMjZYP_Z8svIqaAUg</recordid><startdate>20060301</startdate><enddate>20060301</enddate><creator>Feng, H.P.</creator><creator>Cheng, M.Y.</creator><creator>Wang, Y.L.</creator><creator>Chang, S.C.</creator><creator>Wang, Y.Y.</creator><creator>Wan, C.C.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060301</creationdate><title>Mechanism for Cu void defect on various electroplated film conditions</title><author>Feng, H.P. ; Cheng, M.Y. ; Wang, Y.L. ; Chang, S.C. ; Wang, Y.Y. ; Wan, C.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-ce153bcac03c2a6b46fb2a46d2f3124e9883478c88364725a86d2dba4af940e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Copper plating</topic><topic>Copper void</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Direct current plating</topic><topic>Electrodeposition, electroplating</topic><topic>Electromigration resistance</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Microscopic defects (voids, inclusions, etc.)</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Feng, H.P.</creatorcontrib><creatorcontrib>Cheng, M.Y.</creatorcontrib><creatorcontrib>Wang, Y.L.</creatorcontrib><creatorcontrib>Chang, S.C.</creatorcontrib><creatorcontrib>Wang, Y.Y.</creatorcontrib><creatorcontrib>Wan, C.C.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Feng, H.P.</au><au>Cheng, M.Y.</au><au>Wang, Y.L.</au><au>Chang, S.C.</au><au>Wang, Y.Y.</au><au>Wan, C.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanism for Cu void defect on various electroplated film conditions</atitle><jtitle>Thin solid films</jtitle><date>2006-03-01</date><risdate>2006</risdate><volume>498</volume><issue>1</issue><spage>56</spage><epage>59</epage><pages>56-59</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>This study observes that copper (Cu) films deposited by high current densities or in an aged electrolyte easily generate void defects after chemical mechanical polishing (CMP). The (111)/(200) ratio and the impurity amount of an electroplated Cu film are found to have strong correlation with the formation of void defects. Furthermore, pulse-reverse waveform plating following direct current plating is used for the deposition of partial Cu films that will be exposed after Cu CMP. This new scheme produces a void-less Cu surface after CMP.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.07.062</doi><tpages>4</tpages></addata></record> |
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| ispartof | Thin solid films, 2006-03, Vol.498 (1), p.56-59 |
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| source | ScienceDirect Freedom Collection |
| subjects | Condensed matter: structure, mechanical and thermal properties Copper plating Copper void Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Direct current plating Electrodeposition, electroplating Electromigration resistance Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Microscopic defects (voids, inclusions, etc.) Physics Structure of solids and liquids crystallography |
| title | Mechanism for Cu void defect on various electroplated film conditions |
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