VA-1 an indium phosphide MISFET integrated circuit technology

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Published in:IEEE transactions on electron devices 1981-10, Vol.28 (10), p.1242-1242
Main Author: Kinell, D.K.
Format: Article
Language:English
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container_issue 10
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container_title IEEE transactions on electron devices
container_volume 28
creator Kinell, D.K.
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doi_str_mv 10.1109/T-ED.1981.20566
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_28682800</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1481718</ieee_id><sourcerecordid>28682800</sourcerecordid><originalsourceid>FETCH-LOGICAL-c161t-1c4e144720a66fc485285fe6d2313d3ef82dc743fbbb5babc6bc1825e1a65e9e3</originalsourceid><addsrcrecordid>eNpFkD1PwzAQQC0EEqUwM7BkYkvr81ecgaFqC1QqYqCwWo5zaY3SJMTJ0H_flCIxne703g2PkHugEwCaTjfxcjGBVMOEUanUBRmBlEmcKqEuyYhS0HHKNb8mNyF8D6sSgo3I09cshshWka9y3--jZleHZudzjN5WH8_LzXDvcNvaDvPI-db1vos6dLuqLuvt4ZZcFbYMePc3x-RzcOav8fr9ZTWfrWMHCroYnEAQImHUKlU4oSXTskCVMw4851holrtE8CLLMpnZzKnMgWYSwSqJKfIxeTz_bdr6p8fQmb0PDsvSVlj3wTCtNNOUDuD0DLq2DqHFwjSt39v2YICaUyazMcuFOWUyv5kG4-FseET8p4WGBDQ_AlpaYtQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28682800</pqid></control><display><type>article</type><title>VA-1 an indium phosphide MISFET integrated circuit technology</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Kinell, D.K.</creator><creatorcontrib>Kinell, D.K.</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1981.20566</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1981-10, Vol.28 (10), p.1242-1242</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1481718$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Kinell, D.K.</creatorcontrib><title>VA-1 an indium phosphide MISFET integrated circuit technology</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1981</creationdate><recordtype>article</recordtype><recordid>eNpFkD1PwzAQQC0EEqUwM7BkYkvr81ecgaFqC1QqYqCwWo5zaY3SJMTJ0H_flCIxne703g2PkHugEwCaTjfxcjGBVMOEUanUBRmBlEmcKqEuyYhS0HHKNb8mNyF8D6sSgo3I09cshshWka9y3--jZleHZudzjN5WH8_LzXDvcNvaDvPI-db1vos6dLuqLuvt4ZZcFbYMePc3x-RzcOav8fr9ZTWfrWMHCroYnEAQImHUKlU4oSXTskCVMw4851holrtE8CLLMpnZzKnMgWYSwSqJKfIxeTz_bdr6p8fQmb0PDsvSVlj3wTCtNNOUDuD0DLq2DqHFwjSt39v2YICaUyazMcuFOWUyv5kG4-FseET8p4WGBDQ_AlpaYtQ</recordid><startdate>19811001</startdate><enddate>19811001</enddate><creator>Kinell, D.K.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19811001</creationdate><title>VA-1 an indium phosphide MISFET integrated circuit technology</title><author>Kinell, D.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c161t-1c4e144720a66fc485285fe6d2313d3ef82dc743fbbb5babc6bc1825e1a65e9e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1981</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kinell, D.K.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kinell, D.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>VA-1 an indium phosphide MISFET integrated circuit technology</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1981-10-01</date><risdate>1981</risdate><volume>28</volume><issue>10</issue><spage>1242</spage><epage>1242</epage><pages>1242-1242</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><pub>IEEE</pub><doi>10.1109/T-ED.1981.20566</doi><tpages>1</tpages></addata></record>
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title VA-1 an indium phosphide MISFET integrated circuit technology
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T07%3A11%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=VA-1%20an%20indium%20phosphide%20MISFET%20integrated%20circuit%20technology&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Kinell,%20D.K.&rft.date=1981-10-01&rft.volume=28&rft.issue=10&rft.spage=1242&rft.epage=1242&rft.pages=1242-1242&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1981.20566&rft_dat=%3Cproquest_cross%3E28682800%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c161t-1c4e144720a66fc485285fe6d2313d3ef82dc743fbbb5babc6bc1825e1a65e9e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=28682800&rft_id=info:pmid/&rft_ieee_id=1481718&rfr_iscdi=true