Total dose failures in advanced electronics from single ions

Hard errors from single heavy ions have been reported in advanced commercial CMOS memories. The authors examine the physical interactions of ions with MOS gate oxides-charge generation, recombination, transport, and trapping. They also consider device and circuit characteristics. They conclude that...

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Bibliographic Details
Published in:IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1993-12, Vol.40 (6), p.1820-1830
Main Authors: Oldham, T.R., Bennett, K.W., Beaucour, J., Carriere, T., Polvey, C., Garnier, P.
Format: Article
Language:English
Subjects:
Annealing
Applied sciences
Circuit testing
CMOS memory circuits
Design. Technologies. Operation analysis. Testing
DOSES
Electronics
Error analysis
Exact sciences and technology
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
Integrated circuits
IONIZING RADIATIONS
Laboratories
Latches
MATHEMATICS
MEMORY DEVICES
MOS devices
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RADIATION EFFECTS
RADIATIONS
Random access memory
SEMICONDUCTOR DEVICES 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
STATISTICS
Temperature sensors
Threshold voltage
TRANSISTORS
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Description
Summary:Hard errors from single heavy ions have been reported in advanced commercial CMOS memories. The authors examine the physical interactions of ions with MOS gate oxides-charge generation, recombination, transport, and trapping. They also consider device and circuit characteristics. They conclude that hard errors from single ions are to be expected, and should not be considered surprising.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.273474