The effects of deposition and test conditions on nanomechanical behaviour of ultrathin films produced by plasma-enhanced chemical vapour deposition process at atmospheric pressure

Nanometer thick films have been deposited on silicon substrate by plasma-enhanced chemical vapour deposition (PE-CVD) process using non-homogenous, filamentary dielectric-barrier discharge (DBD) at atmospheric pressure. This film deposition technique enables the introduction some organic fragments i...

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Bibliographic Details
Published in:Thin solid films 2004-11, Vol.466 (1), p.158-166
Main Authors: Rymuza, Zygmunt, Misiak, Maciej, Rzanek-Boroch, Zenobia, Schmidt-Szałowski, Krzysztof, Janowska, Jadwiga
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Dielectric-barrier discharge
Elasticity modulus
Electronics
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Micro- and nanoelectromechanical devices (mems/nems)
Nanohardness
Nanoindentation
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Ultrathin films
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Summary:Nanometer thick films have been deposited on silicon substrate by plasma-enhanced chemical vapour deposition (PE-CVD) process using non-homogenous, filamentary dielectric-barrier discharge (DBD) at atmospheric pressure. This film deposition technique enables the introduction some organic fragments into the coating material—silicon dioxide (or oxynitride)—resulting in good properties for self-lubrication of micro-electro-mechanical systems (MEMS) devices. The effect of the deposition conditions and loading rates on the hardness and the elasticity modulus of the films are presented in this paper.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.02.050