W-band direct detection circuit performance with Sb-heterostructure diodes

W-band direct detection circuits have been designed and fabricated for use in a passive millimeter wave camera. The circuits are based on the recently developed Sb-heterostructure diode. We measure record voltage responsivities in test circuits, up to 8,000 mV/mW from 75 to 93 GHz, with input power...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2004-07, Vol.14 (7), p.316-318
Main Authors: Schulman, J.N., Kolinko, V., Morgan, M., Martin, C., Lovberg, J., Thomas, S., Zinck, J., Boegeman, Y.K.
Format: Article
Language:English
Subjects:
Antimony
Applied sciences
Cameras
Channels
Circuit optimization
Circuit properties
Circuit testing
Circuits
Detectors
Diodes
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Frequency
General equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Integrated circuits
Integrated circuits by function (including memories and processors)
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
Millimeter wave circuits
Millimeter wave measurements
Physics
Power measurement
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
Testing, measurement, noise and reliability
Voltage
Voltage measurement
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Description
Summary:W-band direct detection circuits have been designed and fabricated for use in a passive millimeter wave camera. The circuits are based on the recently developed Sb-heterostructure diode. We measure record voltage responsivities in test circuits, up to 8,000 mV/mW from 75 to 93 GHz, with input power from -50 to -30 dBm. Performance was similar in an actual camera frequency processor board with 128 tuned channels. 72% of detectors showed responsivity at or above 6,000 mV/mW and 3% of channels were above 10,000 mV/mW. Since tens of thousands of Sb-heterostructure diodes can be reproducibly and inexpensively fabricated, this demonstrates for the first time the feasibility of large-scale detector arrays utilizing zero bias direct detection circuitry.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2004.829259