Design of internal-tin Nb(3)Sn current switch strand and strand for accelerator magnets

Different areas of internal-tin Nb(3)Sn strands application have been analyzed. It was shown that internal-tin strands could be most promising for use in persistent current switches and for high field, enhanced current magnet systems. Appropriate Nb(3)Sn internal-tin strands have been designed, fabr...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2000-03, Vol.10 (1), p.996-999
Main Authors: Shikov, A, Pantsyrnyi, V, Nikulin, A, Vorobieva, A, Silaev, A, Soudiev, S, Beliakov, N
Format: Article
Language:English
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Summary:Different areas of internal-tin Nb(3)Sn strands application have been analyzed. It was shown that internal-tin strands could be most promising for use in persistent current switches and for high field, enhanced current magnet systems. Appropriate Nb(3)Sn internal-tin strands have been designed, fabricated and tested. The design of Nb(3)Sn strand for current switch consists of high resistance Cu-Sn-Ni matrix and Nb(3)Sn filaments. It was shown that Nb(3)Sn switch strand 0.9 mm in dia has a current capacity of 1 kA at 4.2 K, 1 T and resistance above 8 muOmicron*cm at 20 K. For the magnets of next generation accelerators Nb(3)Sn internal-tin strand with enhanced current capacity has been designed. Critical current density of that strand was above 2000 A/mm(2) at 4.2 K, 12 T, 0.1 muV/cm
ISSN:1051-8223
DOI:10.1109/77.828399