Characterization and thermal stability of fluorosilicate glass films deposited by high density plasma chemical vapor deposition with different bias power

• Published in: Thin solid films 2006-03, Vol.498 (1), p.289-293
• Main Authors: Hsiao, Wen-Chu, Liu, Chuan-Pu, Wang, Ying Lang, Cheng, Yi-Lung
• Format: Article
• Language: English
• Subjects: Bias power; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; High-density plasma (HDP) CVD; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Stress hysteresis; Thermal desorption
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.07.129

High-density plasma chemical vapor deposition (HDP-CVD) fluorosilicate glass (FSG) films were evaluated for the application of inter-metal dielectric (IMD) materials in current devices. Film characteristics were examined as a function of deposition/sputter etch (D/S) ratio, which was controlled by the bias power in HDP-CVD. FTIR spectra show that the positions of Si–O and Si–F peaks are independent of the bias power, but the Si–O shifted to a higher wave number and Si–F 2 appeared upon annealing for the films deposited at lower bias power. Stress hysteresis of the FSG films after the first thermal cycle shows a nonequilibrium nature of the microstructure related to impurity content, especially for the film deposited with lower bias power. Thermal desorption of H 2O, F, O 2 and Ar were examined, while most of the desorption behaviour can be related to the physical pore structure and pore quantity.