Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elements

Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of /spl plusmn/8%. Analysis shows that the mode is suitable for multi-megabit die w...

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Bibliographic Details
Published in:IEEE transactions on magnetics 1996-09, Vol.32 (5), p.4645-4647
Main Authors: Pohm, A.V., Beech, R.S., Daughton, J.M., Everitt, B.A., Chen, E.Y., Durlam, M., Nordquist, K., Zhu, T., Tehrani, S.
Format: Article
Language:English
Subjects:
Cobalt
Colossal magnetoresistance
Copper alloys
Couplings
Giant magnetoresistance
Hydrogen
Magnetic analysis
Magnetic materials
Magnetic separation
Saturation magnetization
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Summary:Memory elements 0.2 microns wide made from multilayer GMR material have been studied experimentally and analytically. When etched into narrow elements, the 12 to 15% material exhibits a memory mode with large outputs of /spl plusmn/8%. Analysis shows that the mode is suitable for multi-megabit die with high performance if yield can be achieved.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.539105