Thermally isolated MOSFET for gas sensing application

This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFETs, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the de...

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Bibliographic Details
Published in:IEEE electron device letters 2001-01, Vol.22 (1), p.11-13
Main Authors: Briand, D., Sundgren, H., van der Schoot, B., Lundstrom, I., de Rooij, N.F.
Format: Article
Language:English
Subjects:
Devices
Electronic components
Gas detectors
Gas insulation
Gas sensors
Gates
Micromachining
MOSFET circuits
MOSFETs
Passivation
Resistors
Semiconductor diodes
Semiconductor films
Semiconductors
Silicon
Thermal efficiency
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Summary:This work reports on thermally isolated electronic components for gas sensing applications. The device is composed of an array of 4 MOSFETs, a diode and a semiconductor resistor integrated on a micro-hotplate, which is fabricated using bulk micromachining of silicon. The thermal efficiency of the device is 2/spl deg/C/mW with a thermal constant less than 100 ms. Holes are made in the passivation film over the gates of the MOSFET and gas sensitive films deposited on top of the gate insulator. The low thermal mass device realized allows new modes of operation for MOSFET gas sensors such as a combination of the field and thermal effects and a pulsed temperature mode of operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.892428