Very-high power density AlGaN/GaN HEMTs

Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT's. 100-150 /spl mu/m wide devices grown on SiC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-03, Vol.48 (3), p.586-590
Main Authors: Yi-Feng Wu, Kapolnek, D., Ibbetson, J.P., Parikh, P., Keller, B.P., Mishra, U.K.
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Density
Devices
Focusing
Gallium nitrides
Integrated circuits
Power MODFETs
Silicon carbide
Volt-ampere characteristics
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Summary:Research work focusing on the enhancement of large-signal current-voltage (I-V) capabilities has resulted in significant performance improvement for AlGaN/GaN HEMT's. 100-150 /spl mu/m wide devices grown on SiC substrates demonstrated a record power density of 9.8 W/mm at 8 GHz, which is about ten times higher than GaAs-based FETs; similar devices grown on sapphire substrates showed 6.5 W/mm, which was thermally limited, 2-mm-wide devices flip-chip mounted on to AlN substrates produced 9.2-9.8 W output power at 8 GHz with 44-47% PAE. A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.906455