Theory of Noise and Transfer Properties of IMPATT Diode Amplifiers

A theory is formulated which describes quantitatively the noise and transfer properties of IMPATT diode reflection-type negative resistance amplifiers. This theory is based on the method used in the large-signal theory of noise in IMPATT diode oscillators by the present authors. The theory takes int...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1977-04, Vol.25 (4), p.324-332
Main Authors: Goedbloed, J.J., Vlaardingerbroek, M.T.
Format: Article
Language:English
Subjects:
Diodes
Distortion measurement
Equations
Frequency modulation
Injection-locked oscillators
Noise generators
Noise measurement
Phase distortion
Phase noise
Signal generators
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Summary:A theory is formulated which describes quantitatively the noise and transfer properties of IMPATT diode reflection-type negative resistance amplifiers. This theory is based on the method used in the large-signal theory of noise in IMPATT diode oscillators by the present authors. The theory takes into account the signal dependence of the noise generation in the diode, the noise and/or modulation present in the input signal, and also the intermodulation effects occurring between the various frequency bands. The equations are conveniently arranged in matrix form; such a formulation makes it easier to obtain quantitative results in terms of measurable noise and modulation parameters. Agreement between measured and theoretically predicted AM and FM noise of injection-locked oscillators is good. The usefulness of the theory is illustrated by results of calculations on minimum attainable noise of a given amplifier, maximum noise allowable on the input signal, AM-FM conversion, phase distortion, bias modulation, and the correlation between various types of noise.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1977.1129095