Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films

• Published in: Thin solid films 2006-02, Vol.496 (2), p.718-723
• Main Authors: Popov, C., Boycheva, S., Petkov, P., Nedeva, Y., Monchev, B., Parvanov, S.
• Format: Article
• Language: English
• Subjects: Amorphous materials; Anelasticity, internal friction, stress relaxation, and mechanical resonances; Chalcogenide glasses; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Mechanical and acoustical properties of condensed matter; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Stress; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2005.08.365

Thin amorphous chalcogenide films from the GeSe x ( x = 1–5), (GeSe 4) 100− y Ga y and (GeSe 5) 100− y Ga(Tl, B) y ( y = 5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements.