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Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films
Thin amorphous chalcogenide films from the GeSe x ( x = 1–5), (GeSe 4) 100− y Ga y and (GeSe 5) 100− y Ga(Tl, B) y ( y = 5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the...
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| Published in: | Thin solid films 2006-02, Vol.496 (2), p.718-723 |
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| Main Authors: | , , , , , |
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| cites | cdi_FETCH-LOGICAL-c358t-1bd30a01a750970dc3eb0fffc1f11bd129c5c412ef4453e27183862a2d5b9f3f3 |
| container_end_page | 723 |
| container_issue | 2 |
| container_start_page | 718 |
| container_title | Thin solid films |
| container_volume | 496 |
| creator | Popov, C. Boycheva, S. Petkov, P. Nedeva, Y. Monchev, B. Parvanov, S. |
| description | Thin amorphous chalcogenide films from the GeSe
x
(
x
=
1–5), (GeSe
4)
100−
y
Ga
y
and (GeSe
5)
100−
y
Ga(Tl, B)
y
(
y
=
5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements. |
| doi_str_mv | 10.1016/j.tsf.2005.08.365 |
| format | article |
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x
(
x
=
1–5), (GeSe
4)
100−
y
Ga
y
and (GeSe
5)
100−
y
Ga(Tl, B)
y
(
y
=
5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2005.08.365</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Lausanne: Elsevier B.V</publisher><subject>Amorphous materials ; Anelasticity, internal friction, stress relaxation, and mechanical resonances ; Chalcogenide glasses ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; Materials science ; Mechanical and acoustical properties of condensed matter ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Stress ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Thin solid films, 2006-02, Vol.496 (2), p.718-723</ispartof><rights>2005 Elsevier B.V.</rights><rights>2006 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-1bd30a01a750970dc3eb0fffc1f11bd129c5c412ef4453e27183862a2d5b9f3f3</citedby><cites>FETCH-LOGICAL-c358t-1bd30a01a750970dc3eb0fffc1f11bd129c5c412ef4453e27183862a2d5b9f3f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17477232$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Popov, C.</creatorcontrib><creatorcontrib>Boycheva, S.</creatorcontrib><creatorcontrib>Petkov, P.</creatorcontrib><creatorcontrib>Nedeva, Y.</creatorcontrib><creatorcontrib>Monchev, B.</creatorcontrib><creatorcontrib>Parvanov, S.</creatorcontrib><title>Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films</title><title>Thin solid films</title><description>Thin amorphous chalcogenide films from the GeSe
x
(
x
=
1–5), (GeSe
4)
100−
y
Ga
y
and (GeSe
5)
100−
y
Ga(Tl, B)
y
(
y
=
5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements.</description><subject>Amorphous materials</subject><subject>Anelasticity, internal friction, stress relaxation, and mechanical resonances</subject><subject>Chalcogenide glasses</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Mechanical and acoustical properties of condensed matter</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Stress</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNp9kM9KAzEQxoMoWKsP4G0vioK7TpLdzS6etGgVCh5azyHNTmjK_qnJtuDNd_ANfRJTWvHmZWYg3_dN5kfIOYWEAs1vl0nvTcIAsgSKhOfZARnQQpQxE5wekgFACnEOJRyTE--XAEAZ4wMynfYOvY9M5xrV266NbBvhRq06p3qsItV0brXo1j4a4_fn1xQj1Va_cyhjdTWrb6KH66hfBKexdeNPyZFRtcezfR-St6fH2eg5nryOX0b3k1jzrOhjOq84KKBKZFAKqDTHORhjNDU0vFFW6kynlKFJ04wjE7TgRc4Uq7J5abjhQ3K5y1257n2NvpeN9RrrWrUYfixZISjjOQtCuhNq13nv0MiVs41yH5KC3OKTSxnwyS0-CYUM-ILnYh-uvFa1carV1v8ZRSoE49vsu50Ow6Ubi056bbHVWFmHupdVZ__Z8gMsvIbF</recordid><startdate>20060221</startdate><enddate>20060221</enddate><creator>Popov, C.</creator><creator>Boycheva, S.</creator><creator>Petkov, P.</creator><creator>Nedeva, Y.</creator><creator>Monchev, B.</creator><creator>Parvanov, S.</creator><general>Elsevier B.V</general><general>Elsevier Science</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20060221</creationdate><title>Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films</title><author>Popov, C. ; Boycheva, S. ; Petkov, P. ; Nedeva, Y. ; Monchev, B. ; Parvanov, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-1bd30a01a750970dc3eb0fffc1f11bd129c5c412ef4453e27183862a2d5b9f3f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Amorphous materials</topic><topic>Anelasticity, internal friction, stress relaxation, and mechanical resonances</topic><topic>Chalcogenide glasses</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Mechanical and acoustical properties of condensed matter</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Stress</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Popov, C.</creatorcontrib><creatorcontrib>Boycheva, S.</creatorcontrib><creatorcontrib>Petkov, P.</creatorcontrib><creatorcontrib>Nedeva, Y.</creatorcontrib><creatorcontrib>Monchev, B.</creatorcontrib><creatorcontrib>Parvanov, S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Popov, C.</au><au>Boycheva, S.</au><au>Petkov, P.</au><au>Nedeva, Y.</au><au>Monchev, B.</au><au>Parvanov, S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films</atitle><jtitle>Thin solid films</jtitle><date>2006-02-21</date><risdate>2006</risdate><volume>496</volume><issue>2</issue><spage>718</spage><epage>723</epage><pages>718-723</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Thin amorphous chalcogenide films from the GeSe
x
(
x
=
1–5), (GeSe
4)
100−
y
Ga
y
and (GeSe
5)
100−
y
Ga(Tl, B)
y
(
y
=
5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements.</abstract><cop>Lausanne</cop><pub>Elsevier B.V</pub><doi>10.1016/j.tsf.2005.08.365</doi><tpages>6</tpages></addata></record> |
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| language | eng |
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| source | Elsevier |
| subjects | Amorphous materials Anelasticity, internal friction, stress relaxation, and mechanical resonances Chalcogenide glasses Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Mechanical and acoustical properties of condensed matter Methods of deposition of films and coatings film growth and epitaxy Physics Stress Vapor phase epitaxy growth from vapor phase |
| title | Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films |
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