A two-dimensional analytical threshold voltage model for MOSFET's with arbitrarily doped substrates

A threshold voltage model is presented which is valid for short- and long-channel MOSFET's with a nonuniform substrate doping profile. The model is based upon an approximate two-dimensional analytical solution of Poisson's equation for a MOSFET of arbitrary substrate doping profile which t...

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Bibliographic Details
Published in:IEEE electron device letters 1986-07, Vol.7 (7), p.401-403
Main Authors: Kendall, J.D., Boothroyd, A.R.
Format: Article
Language:English
Subjects:
Analytical models
Applied sciences
Boundary conditions
Doping profiles
Exact sciences and technology
Laplace equations
MOSFET circuits
Niobium
Other techniques and industries
Poisson equations
Predictive models
Semiconductor process modeling
Threshold voltage
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Summary:A threshold voltage model is presented which is valid for short- and long-channel MOSFET's with a nonuniform substrate doping profile. The model is based upon an approximate two-dimensional analytical solution of Poisson's equation for a MOSFET of arbitrary substrate doping profile which takes into account the effect of curved junctions of finite depth. The analytical model is compared to MINIMOS simulations showing that it can accurately predict short-channel threshold voltage falloff and threshold voltages in this vicinity without the use of fitting parameters.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26416