Temperature dependence of MOSFET substrate current

Hitherto, theoretical models for MOSFET substrate current predicted that substrate current is a strong function of temperature. However, experimental data presented in this and previous studies show that the ratio of substrate current to drain current is insensitive to temperature over the range 77...

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Bibliographic Details
Published in:IEEE electron device letters 1993-05, Vol.14 (5), p.268-271
Main Authors: Huang, J.H., Zhang, G.B., Liu, Z.H., Duster, J., Wann, S.J., Ko, P., Hu, C.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Electrons
Exact sciences and technology
Impact ionization
Impurities
MOSFET circuits
Optical scattering
Predictive models
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Temperature dependence
Temperature sensors
Threshold voltage
Transistors
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Summary:Hitherto, theoretical models for MOSFET substrate current predicted that substrate current is a strong function of temperature. However, experimental data presented in this and previous studies show that the ratio of substrate current to drain current is insensitive to temperature over the range 77 to 300 K. The authors propose a modified model for an electron mean-free path (MFP) in the substrate current based on the concept of energy relaxation. The different between the energy and momentum relaxation MFP is clarified, and it is shown that a substrate current model with modified MFP can explain the temperature dependence of the substrate current.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.215189