Temperature dependence of the electrical conductivity, Hall effect and thermoelectric power of SnS single crystals

• Published in: Journal of alloys and compounds 2005-08, Vol.398 (1), p.21-25
• Main Author: Nassary, M.M.
• Format: Article
• Language: English
• Subjects: Exact sciences and technology; Hall coefficient; Physics; SnS single crystal; Thermoelectric power
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2005.02.025

The electrical conductivity and the Hall effect were measured on a SnS single crystal, grown by the Bridgman method over the temperature range 141–523 K, in two crystallographic directions. The investigated sample was found to be of p-type conductivity. The conductivity at room temperature was σ / / = 0.193   Ω − 1   c m − 1 , σ ⊥ = 0.063   Ω − 1   c m − 1 parallel and perpendicular to layers plane, respectively. The energy gap was calculated to be E g / / = 1.106   eV and E g ⊥ = 0.56   eV parallel and perpendicular to layers plane, respectively. The thermoelectric power measurements of SnS were made in temperature range from 172 to 410 K. The combination of the electrical and thermal measurements makes it possible to deduce a lot of physical parameters, such as mobilities ratio, effective masses, relaxation times, diffusion lengths and diffusion coefficients for majority and minority carriers at room temperature.