A GaAs gate heterojunction FET

A new semiconductor-insulator-semiconductor field-effect transistor has been fabricated. The device consists of a heavily doped n-type GaAs gate with undoped (Al,Ga)As as the gate insulator, on an undoped GaAs layer. This structure gives the device a natural threshold voltage near zero, well suited...

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Bibliographic Details
Published in:IEEE electron device letters 1984-09, Vol.5 (9), p.379-381
Main Authors: Solomon, P.M., Knoedler, C.M., Wright, S.L.
Format: Article
Language:English
Subjects:
Applied sciences
Doping
Electronics
Electrons
Exact sciences and technology
FETs
Gallium arsenide
HEMTs
Heterojunctions
MODFET circuits
MOSFET circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
Voltage control
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Summary:A new semiconductor-insulator-semiconductor field-effect transistor has been fabricated. The device consists of a heavily doped n-type GaAs gate with undoped (Al,Ga)As as the gate insulator, on an undoped GaAs layer. This structure gives the device a natural threshold voltage near zero, well suited for low-voltage logic. The threshold voltage is, to first order, independent of Al mole fraction and thickness of the (Al,Ga)As layer. The layers were grown by MBE and devices fabricated using a self-aligned technique involving ion-implantation and rapid thermal annealing. A transconductance of 240 mS/mm and a field-effect mobility of about 100 000 cm 2 /V-s were achieved at 77 K.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1984.25953