Low Weibull slope of breakdown distributions in high-k layers

The reliability of various Al/sub 2/O/sub 3/, ZrO/sub 2/ and Al/sub 2/O/sub 3//ZrO/sub 2/ double layers with a physical oxide thickness from 3 nm to 15 nm and TiN gate electrodes was studied by measuring time-to-breakdown using gate injection and constant voltage stress. The extracted Weibull slope...

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Bibliographic Details
Published in:IEEE electron device letters 2002-04, Vol.23 (4), p.215-217
Main Authors: Kauerauf, T., Degraeve, R., Cartier, E., Soens, C., Groeseneken, G.
Format: Article
Language:English
Subjects:
Aluminum oxide
Breakdown
Capacitors
Devices
Dielectric breakdown
Electric breakdown
Electrodes
Gates
High K dielectric materials
High-K gate dielectrics
Oxides
Stress
Tin
Voltage
Weibull distribution
Zirconium dioxide
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Summary:The reliability of various Al/sub 2/O/sub 3/, ZrO/sub 2/ and Al/sub 2/O/sub 3//ZrO/sub 2/ double layers with a physical oxide thickness from 3 nm to 15 nm and TiN gate electrodes was studied by measuring time-to-breakdown using gate injection and constant voltage stress. The extracted Weibull slope /spl beta/ of the breakdown distribution is found to be below 2 and shows no obvious thickness dependence. These findings deviate from previous results on intrinsic breakdown in SiO/sub 2/, where a strong thickness dependence was explained by the percolation model. Although promising performance on devices with high-k layers as dielectric can be obtained, it is argued that gate oxide reliability is likely limited by extrinsic factors.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.992843