Thermal annealing effect on the electrical properties and structural defects density of non-stoichiometric a-GaAs films

Amorphous gallium arsenide (a-GaAs) films were prepared from their constituents using the co-evaporation technique. The temperature dependence of DC conductivity for the as-deposited (fresh) As-rich and that of thermally annealed films over the temperature range 373–553K is measured. Results of the...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2005-11, Vol.368 (1-4), p.209-214
Main Authors: Abdel-Wahab, F.A., Kotkata, M.F.
Format: Article
Language:English
Subjects:
Amorphous semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Disordered solids
Electrical properties
Electronic transport in condensed matter
Exact sciences and technology
GaAs
Physics
Tetrahedral semiconductors
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Summary:Amorphous gallium arsenide (a-GaAs) films were prepared from their constituents using the co-evaporation technique. The temperature dependence of DC conductivity for the as-deposited (fresh) As-rich and that of thermally annealed films over the temperature range 373–553K is measured. Results of the characteristic electrical parameters indicate non-monotonic behavior during the thermal annealing range 373–423K and a monotonic one in the range 423–553K. Results of the density of structural defect states, using the space-charge-limited current model, are given and discussed in relation to the nature and distribution of defect states regarding their dependence on the thermal treatment.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.07.016