Temperature dependence of the optical functions of amorphous silicon-based materials: application to in situ temperature measurements by spectroscopic ellipsometry

The optical functions of amorphous silicon thin films have been studied with spectroscopic ellipsometry (SE) in the temperature range from 290 to 520 K. The ellipsometry data were modeled using Tauc–Lorentz dispersion law for amorphous materials. It has been found that the temperature coefficients o...

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Bibliographic Details
Published in:Thin solid films 2004-12, Vol.468 (1), p.298-302
Main Authors: Daineka, D., Suendo, V., Roca i Cabarrocas, P.
Format: Article
Language:English
Subjects:
Amorphous silicon-based materials
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Ellipsometry
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical functions
Physics
Spectroscopic ellipsometry
Temperature measurements
Thin films
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Summary:The optical functions of amorphous silicon thin films have been studied with spectroscopic ellipsometry (SE) in the temperature range from 290 to 520 K. The ellipsometry data were modeled using Tauc–Lorentz dispersion law for amorphous materials. It has been found that the temperature coefficients of Tauc–Lorentz parameters, such as the optical gap, are rather similar for four different materials, which suggests that the obtained values are valid for a broad range of amorphous silicon-based materials and can be used to determine the surface temperature by ellipsometry. A practical example of using spectroscopic ellipsometry for in situ temperature measurements in the plasma enhanced chemical vapor deposition environment is given.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2004.05.011