Experimental analysis of transmission line parameters in high-speed GaAs digital circuit interconnects

Transmission line properties of typical high-speed interconnects were experimentally investigated by fabricating and characterizing coplanar strips on semi-insulating GaAs substrates. The strips have thicknesses of about 2500 AA or 5000 AA and widths of 4, 6, or 8 mu m so as to be representative of...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1991-08, Vol.39 (8), p.1361-1367
Main Authors: Kiziloglu, K., Dagli, N., Matthaei, G.L., Long, S.I.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance measurement
Circuit properties
Coplanar transmission lines
Digital circuits
Electric, optical and optoelectronic circuits
Electrical resistance measurement
Electronic circuits
Electronics
Exact sciences and technology
Gallium arsenide
Impedance measurement
Integrated circuit interconnections
Length measurement
Strips
Transmission lines
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Summary:Transmission line properties of typical high-speed interconnects were experimentally investigated by fabricating and characterizing coplanar strips on semi-insulating GaAs substrates. The strips have thicknesses of about 2500 AA or 5000 AA and widths of 4, 6, or 8 mu m so as to be representative of on-chip interconnects in high-speed GaAs digital circuits. Measurements are carried out up to 18 GHz, and the pertinent line parameters, such as resistance, capacitance per unit length, and characteristic impedance, are extracted using the measured S-parameters. The measurement results confirm the quasi-TEM properties of such interconnects. In all cases, the measured distributed capacitance and inductance are sensitive to frequency whereas the resistance is found to increase as much as 38% for the widest and thickest conductors.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.85411