Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

• Published in: Physica Status Solidi (b) 2005-09, Vol.242 (11), p.2326-2344
• Main Authors: Carlin, J.-F., Zellweger, C., Dorsaz, J., Nicolay, S., Christmann, G., Feltin, E., Butté, R., Grandjean, N.
• Format: Article
• Language: English
• Subjects: 42.55.Sa; 78.20.-e; 78.40. Fy; 78.55.Cr; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Iii-v semiconductors; Laser optical systems: design and operation; Lasers; Light-emitting devices; Microcavity and microdisk lasers; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optics; Optoelectronic devices; Photoluminescence; Physics; Resonators, cavities, amplifiers, arrays, and rings; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0370-1972; 1521-3951
• DOI: 10.1002/pssb.200560968

We propose to use lattice‐matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III‐nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state‐of‐the‐art values for III‐nitrides, and announce the future importance of AlInN in GaN‐based optoelectronics. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)